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阳明量子产品图片1(ZnO电镜图).jpg
阳明量子产品图片1(ZnO).jpg

ZnO QDs

Tunable polarity between polar and non-polar

Bandgap tunable from 3.5 eV to 4.0 eV, suitable for electron transport layers for solar cells and QLEDs. Different bandgaps, different band structures which are crutial for device performances. Both polar and non-polar products available.

ZnO QDs

About 4.0eV bandgap products, suitable for QLED electron transport. Shallower conduction band edge energy levels, benefitial for electron injection from ZnO into QD luminaence layers.

ZnO QDs

About 3.5eV products, suitable for solar cell electron transport layers or n-type layers. Strong n-type doping benefitial for excited electrons flow from p-type to n-type in solar cells.

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